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Enabling Researcher-Driven Innovation and Exploration |
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C.R. Cirba, S. Cristoloveanu, R.D. Schrimpf, L.C. Feldman, D.M. Fleetwood, and K.F. Galloway
Total-Dose Radiation Hardness of Double-Gate Ultra-Thin SOI MOSFETs. In PV 2003-05 Silicon-on-Insulator Technology and Devices XI, edited by S. Cristoloveanu, G. K. Celler, J. G. F. Gamiz, K. Izumi, and Y. W. Kim (The Electrochemical Society), pp. 493-498 (2003).
A. Lunardini, B. Narasimham, V. Ramachandran, V. Srinivasan, R.D. Schrimpf, and W.H. Robinson

A Performance Comparison Between Hardened-by-Design and Conventional-Design Standard Cells.Presented at RADECS Workshop 2004.
F. Antinori, (ed.) (INFN, Padua) , S.A. Bass, (ed.) (Duke U.) ,
Radiation Induced Transient Effects in HgCdTe IR Focal Plane Arrays, Proc. of the SPIE, Conf. on Optical, Infrared, and Millimeter Space Telescopes, ed. John. C. Mather, 5487:698-709 (2004).
Forum: North of the Border. In The Industrial Physicist 9, No. 6, pp. 26-27 (2003).
D.M. Fleetwood
Microstructures of Defects Causing Noise in MOS Devices. In Noise as a Tool for Studying Materials, edited by M.B. Weissman, N.E. Israeloff, and S. Kogan (Proc. SPIE Vol. 5112), pp. 259-270 (2003).
D.M. Fleetwood, S.N. Rashkeev, Z.Y. Lu, C.J. Nicklaw, J.A. Felix, R.D. Schrimpf, and S.T. Pantelides
Dipoles in SiO2: Border Traps or Not? In PV 2003-02 Silicon Nitride and Silicon Dioxide Thin Insulating Films (7th), edited by R.E. Sah, K.B. Sunda, J. Deen, D. Landheer, W.D. Brown, and D. Misra (The Electrochemical Society), pp. 291-307 (2003).
I. Tsamardinos, C.F. Aliferis, and A. Statnikov
Time and Sample Efficient Discovery of Markov Blankets and Direct Causal Relations. 9th ACM SIGKDD International Conference on Knowledge Discovery and Data Mining, 2003.
I. Tsamardinos, C.F. Aliferis, and A. Statnikov
Algorithms for Large Scale Markov Blanket Discovery. 16th International Florida Artificial Intelligence Research Society (FLAIRS) Conference, 2003.
L. Tsetseris, X. Zhou, D.M. Fleetwood, R.D. Schrimpf, and S.T. Pantelides
Field-Induced Reactions of Water Molecules at Si-Dielectric Interfaces. E3.3, MRS Proc. 786, Boston, MA (2003).
H.D. Xiong, D.M. Fleetwood, and J.R. Schwank
Low Frequency Noise and Radiation Response of Buried Oxides in SOI nMOS Transistors. In Noise in Devices and Circuits, edited by M. J. Deen, Z. Celik-Butler, and M. E. Levinshtein (Proc. SPIE Vol. i5113), pp. 44-55 (2003).
